发明授权
- 专利标题: Illumination system for EUV microlithography
- 专利标题(中): EUV微光刻照明系统
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申请号: US13038453申请日: 2011-03-02
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公开(公告)号: US09304400B2公开(公告)日: 2016-04-05
- 发明人: Michael Layh , Ralf Stuetzle , Damian Fiolka , Martin Endres , Holger Weigand
- 申请人: Michael Layh , Ralf Stuetzle , Damian Fiolka , Martin Endres , Holger Weigand
- 申请人地址: DE Oberkochen
- 专利权人: Carl Zeiss SMT GmbH
- 当前专利权人: Carl Zeiss SMT GmbH
- 当前专利权人地址: DE Oberkochen
- 代理机构: Fish & Richardson P.C.
- 优先权: DE102008042462 20080930
- 主分类号: G03B27/54
- IPC分类号: G03B27/54 ; G03F7/20 ; G02B17/06 ; G02B27/00
摘要:
An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.
公开/授权文献
- US20110177463A1 ILLUMINATION SYSTEM FOR EUV MICROLITHOGRAPHY 公开/授权日:2011-07-21
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