Invention Grant
- Patent Title: Integrated capacitor based power distribution
- Patent Title (中): 集成电容器配电
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Application No.: US13976053Application Date: 2013-03-15
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Publication No.: US09305629B2Publication Date: 2016-04-05
- Inventor: Sasikanth Manipatruni , Dmitri E. Nikonov , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2013/032369 WO 20130315
- International Announcement: WO2014/143016 WO 20140918
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C5/14

Abstract:
An embodiment provides power (having low voltage, high current, and high current density) to ultra low voltage non-CMOS based devices using a distributed capacitor that is integrated onto the same chip as the non-CMOS devices. For example, an embodiment provides a spin logic gate adjacent dielectric material and first and second plates of a capacitor. The capacitor discharges low voltage/high current to the spin logic gate using a step down switched mode power supply that charges numerous capacitors during one clock cycle (using a switching element configured in a first orientation) and discharges power from the capacitors during the opposite clock cycle (using the switching element configured in a second orientation). The capacitors discharge the current out of plane and to the spin logic devices without having to traverse long power dissipating interconnect paths. Other embodiments are described herein.
Public/Granted literature
- US20140269034A1 INTEGRATED CAPACITOR BASED POWER DISTRIBUTION Public/Granted day:2014-09-18
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