Invention Grant
US09305660B2 Page buffer connections and determining pass/fail condition of memories
有权
页面缓冲区连接并确定存储器的通过/失败状态
- Patent Title: Page buffer connections and determining pass/fail condition of memories
- Patent Title (中): 页面缓冲区连接并确定存储器的通过/失败状态
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Application No.: US14012602Application Date: 2013-08-28
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Publication No.: US09305660B2Publication Date: 2016-04-05
- Inventor: Violante Moschiano , Giovanni Santin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/06 ; G11C16/34 ; G11C16/24 ; G11C16/00 ; G11C29/04
Abstract:
Apparatus and methods for determining pass/fail condition of memories facilitate array efficiencies. In at least one embodiment, a set of common lines, one for each rank of page buffers corresponding to a page, determine the pass/fail status of all connected memory cells, and the pass/fail status results for each line can be combined to determine a pass/fail for the page of memory.
Public/Granted literature
- US20130343132A1 MEMORY ARRAYS AND METHODS OF OPERATING MEMORY Public/Granted day:2013-12-26
Information query
