Invention Grant
- Patent Title: Metal oxide semiconductor devices and fabrication methods
- Patent Title (中): 金属氧化物半导体器件及制造方法
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Application No.: US13728264Application Date: 2012-12-27
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Publication No.: US09306057B2Publication Date: 2016-04-05
- Inventor: Akira Ito
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brinks Gilson & Lione
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/08 ; H01L29/45 ; H01L29/49
Abstract:
A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a raised drain structure above and in contact with the second well and separate from the gate structure. The raised drain structure includes a drain connection point above the surface of the second well.
Public/Granted literature
- US20140183628A1 METAL OXIDE SEMICONDUCTOR DEVICES AND FABRICATION METHODS Public/Granted day:2014-07-03
Information query
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