Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14465968Application Date: 2014-08-22
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Publication No.: US09306070B2Publication Date: 2016-04-05
- Inventor: Kang-Hyun Baek , Sung-Hyun Park , Sang-Hoon Baek , Tae-Joong Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2013-0139840 20131118
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/11 ; H01L27/02 ; H01L29/06 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes: active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active fins includes a first region and a second region adjacent to the first direction in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction.
Public/Granted literature
- US20150137262A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-05-21
Information query
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