Invention Grant
US09306160B2 Memory device having oxygen control layers and manufacturing method of same
有权
具有氧气控制层的存储器件及其制造方法
- Patent Title: Memory device having oxygen control layers and manufacturing method of same
- Patent Title (中): 具有氧气控制层的存储器件及其制造方法
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Application No.: US14309665Application Date: 2014-06-19
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Publication No.: US09306160B2Publication Date: 2016-04-05
- Inventor: Kuang-Hao Chiang , Dai-Ying Lee , Erh-Kun Lai
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L47/00 ; H01L45/00 ; G11C13/00
Abstract:
A memory device includes a first metal layer and a second metal layer, a metal oxide layer disposed between the first metal layer and the second metal layer, and at least one oxygen control layer disposed between the metal oxide layer and at least one of the first metal layer and the second metal layer. The at least one oxygen control layer has a graded oxygen content.
Public/Granted literature
- US20150372228A1 Memory Device Having Oxygen Control Layers And Manufacturing Method Of Same Public/Granted day:2015-12-24
Information query
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