Invention Grant
- Patent Title: Semiconductor chip that emits polarized radiation
- Patent Title (中): 发射极化辐射的半导体芯片
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Application No.: US14112000Application Date: 2012-04-16
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Publication No.: US09312441B2Publication Date: 2016-04-12
- Inventor: Hans Lindberg
- Applicant: Hans Lindberg
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102011017196 20110415
- International Application: PCT/EP2012/056910 WO 20120416
- International Announcement: WO2012/140257 WO 20121018
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/58 ; H01L33/60 ; H01L33/10 ; H01L33/46

Abstract:
A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.
Public/Granted literature
- US20140131754A1 Semiconductor Chip that Emits Polarized Radiation Public/Granted day:2014-05-15
Information query
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