公开(公告)号：US5405496A

公开(公告)日：1995-04-11

申请号：US176694

申请日：1994-01-03

Applicant: Mats-Olov Hedblom ,  Hans Lindberg

Inventor： Mats-Olov Hedblom ,  Hans Lindberg

IPC: D21C11/04 ,  D21H17/00 ,  D21C11/12

CPC classification number: D21C11/04 ,  D21H17/00 ,  Y10S423/03

Abstract: The invention relates to a process for preparation, under reducing conditions, of cooking liquors having high sulphidity for sulphate pulp cooking, wherein the black liquor obtained in the cooking process is fed, after evaporation, completely or partly to a reactor operating at increased temperature which is obtained by energy supply from an external heat source and/or release of energy from the black liquor, a melt essentially consisting of sodium sulphide being formed and withdrawn to be further processed to cooking liquor. The process of the invention is characterized in that in addition there are fed to the reactor the whole or part of sulphur-containing and/or sulphur- and sodium-containing materials present in the pulp mill, including sulphur-containing and/or sodium- and sulphur-containing make-up chemicals used for the total chemicals balance of the pulp mill, in such a way that the mole ratio of sodium to sulphur in the total mixture fed to the reactor is within the range of 1.5 to 4. According to a preferred embodiment of the invention there is used an aqueous solution of the sodium sulphide melt obtained in so-called modified sulphate cooking.

Abstract translation: 本发明涉及在还原条件下制备用于硫酸盐纸浆蒸煮的具有高硫化物的蒸煮液的方法，其中在蒸发过程中获得的黑液在蒸发后被全部或部分地进料到在升高的温度下操作的反应器 通过从外部热源的能量供应和/或从黑液中释放能量获得，基本上由硫化钠组成的熔体被形成和抽出以进一步加工成蒸煮液。 本发明的方法的特征在于，还向反应器中供应存在于纸浆厂中的含硫和/或含硫和含钠材料的全部或部分，包括含硫和/ 和用于纸浆厂的总化学品平衡的含硫化妆品化学品，使得进料到反应器的总混合物中的钠与硫的摩尔比在1.5至4的范围内。根据 使用所谓的改性硫酸盐蒸煮中获得的硫化钠熔体的水溶液，本发明的优选实施方案。

公开(公告)号：USD344276S

公开(公告)日：1994-02-15

申请号：US914141

申请日：1992-07-17

Applicant: Lars Markusson ,  Hans Lindberg ,  Lars-Gunnar Wallstrom

Designer： Lars Markusson ,  Hans Lindberg ,  Lars-Gunnar Wallstrom

公开(公告)号：US09312441B2

公开(公告)日：2016-04-12

申请号：US14112000

申请日：2012-04-16

Applicant: Hans Lindberg

Inventor： Hans Lindberg

IPC: H01L33/22 ,  H01L33/58 ,  H01L33/60 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/46 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

Abstract: A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.

Abstract translation: 发射辐射的半导体芯片包括具有活性区的半导体本体，其发射具有第一偏振的第一辐射分量且具有第二偏振的第二辐射分量的非偏振辐射。 晶格结构用作波片或偏振滤波器，并且引起相对于半导体芯片通过输出侧发射的辐射中的另一辐射分量的一个辐射分量的增加。 因此，半导体芯片发射具有放大的辐射分量的极化的偏振辐射。 衰减的辐射分量保留在半导体芯片中的光学结构，其将残留在半导体芯片中的衰减的辐射分量的至少一部分的偏振转换为放大的辐射分量的偏振，以及与输出侧相反的反射后侧。

公开(公告)号：US5628874A

公开(公告)日：1997-05-13

申请号：US392761

申请日：1995-02-23

Applicant: Hans Lindberg ,  Birgitta Sundblad

Inventor： Hans Lindberg ,  Birgitta Sundblad

IPC: D21C11/00 ,  D21C11/04 ,  D21C11/06 ,  D21C11/12 ,  D21C11/05

CPC classification number: D21C11/04 ,  D21C11/066

Abstract: The present invention relates to an environmental-friendly process for reducing the content of chloride in a liquor inventory of a chemical pulp mill. According to the invention, in a recovery system for pulping chemicals containing sulphur and an alkali metal, precipitator dust formed in a recovery boiler is collected and withdrawn, dissolved in water and electrolyzed for production of chlorine or hydrochloric acid in the anolyte. Since the dust normally contains a large amount of sodium sulphate, sulphuric acid and sodium hydroxide can also be produced in the electrolysis. To reduce the content of impurities, before the electrolysis, the pH of the aqueous solution is adjusted to above about 10 to precipitate inorganic substances which are separated-off together with flocculated or undissolved substances.

Abstract translation: PCT No.PCT / SE93 / 00688 Sec。 371日期1995年2月23日 102（e）1995年2月23日PCT PCT 1993年8月18日PCT公布。 第WO94 / 04747号公报 日期：1994年3月3日本发明涉及一种用于降低化学纸浆厂的液体库存中的氯化物含量的环保方法。 根据本发明，在用于制备含硫和碱金属的化学品的回收系统中，在回收锅炉中形成的除尘器粉尘被收集和抽出，溶解在水中并电解以在阳极电解液中生产氯或盐酸。 由于粉尘通常含有大量的硫酸钠，所以在电解中也可以生成硫酸和氢氧化钠。 为了减少杂质的含量，在电解之前，将水溶液的pH调节至约10以上，以沉淀与絮凝或未溶解的物质一起分离的无机物质。

公开(公告)号：US20140133505A1

公开(公告)日：2014-05-15

申请号：US14118819

申请日：2012-06-08

Applicant: Hans Lindberg

Inventor： Hans Lindberg

IPC: H01S5/10

CPC classification number: H01S5/1003 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1032 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1246 ,  H01S5/4031 ,  H01S5/4087

Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.

Abstract translation: 边缘发射半导体激光器包括嵌入有产生激光辐射的有源层的第一波导层。 该激光器还包括其中没有嵌入有源层的第二波导层。 在有源层中产生的激光辐射形成驻波，其在第一波导层中具有相应的强度最大值，并且在第二波导层中具有相应的强度最小值，并且在第一波导层中具有相应的强度最小值，并且在第二波导层中具有相应的强度最大值 在半导体激光器的光束方向上的周期性间隔。 在边缘发射半导体激光器的表面设置至少区域性周期性接触结构。 接触结构的周期长度等于驻波的周期长度，使得半导体激光器具有由接触结构的周期长度设定的发射波长。

公开(公告)号：USD351606S

公开(公告)日：1994-10-18

申请号：US914095

申请日：1992-07-16

Applicant: Lars Markusson ,  Hans Lindberg ,  Lars-Gunnar Wallstrom

Designer： Lars Markusson ,  Hans Lindberg ,  Lars-Gunnar Wallstrom

公开(公告)号：US5190419A

公开(公告)日：1993-03-02

申请号：US717644

申请日：1991-06-19

Applicant: Hans Lindberg ,  Lars-Gunnar Wallstrom

Inventor： Hans Lindberg ,  Lars-Gunnar Wallstrom

IPC: B23C5/10 ,  B23C5/20 ,  B23C5/22

CPC classification number: B23C5/1027 ,  B23C5/2221 ,  B23C2200/083 ,  B23C2200/086 ,  B23C2200/123 ,  B23C2200/201 ,  B23C2200/203 ,  B23C2200/205 ,  B23C2200/367 ,  Y10T407/1924 ,  Y10T407/1948 ,  Y10T407/23

Abstract: A ball nose end mill comprises a body having a semi-spherical front surface and a plurality of indexable cutting inserts. A central one of the inserts is of generally triangular shape, and the additional inserts are of generally rectangular shape. The central insert has a generally convexly curved top surface, and the cutting edges thereof include main cutting edges which are convexly curved when the central insert is viewed from the side.

公开(公告)号：USD347642S

公开(公告)日：1994-06-07

申请号：US600970

申请日：1990-10-22

Applicant: Hans Lindberg

Designer： Hans Lindberg

公开(公告)号：US08995491B2

公开(公告)日：2015-03-31

申请号：US14118819

申请日：2012-06-08

Applicant: Hans Lindberg

Inventor： Hans Lindberg

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/042 ,  H01S5/40 ,  H01S5/12 ,  H01S5/026 ,  H01S5/065

CPC classification number: H01S5/1003 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1032 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1246 ,  H01S5/4031 ,  H01S5/4087

Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.

Abstract translation: 边缘发射半导体激光器包括嵌入有产生激光辐射的有源层的第一波导层。 该激光器还包括其中没有嵌入有源层的第二波导层。 在有源层中产生的激光辐射形成驻波，其在第一波导层中具有相应的强度最大值，并且在第二波导层中具有相应的强度最小值，并且在第一波导层中具有相应的强度最小值，并且在第二波导层中具有相应的强度最大值 在半导体激光器的光束方向上的周期性间隔。 在边缘发射半导体激光器的表面设置至少区域性周期性接触结构。 接触结构的周期长度等于驻波的周期长度，使得半导体激光器具有由接触结构的周期长度设定的发射波长。

公开(公告)号：US20140131754A1

公开(公告)日：2014-05-15

申请号：US14112000

申请日：2012-04-16

Applicant: Hans Lindberg

Inventor： Hans Lindberg

IPC: H01L33/22 ,  H01L33/60

CPC classification number: H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/46 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

Abstract: A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.

Abstract translation: 发射辐射的半导体芯片包括具有活性区的半导体本体，其发射具有第一偏振的第一辐射分量且具有第二偏振的第二辐射分量的非偏振辐射。 晶格结构用作波片或偏振滤光器，并且引起相对于半导体芯片通过输出侧发射的辐射中的其它辐射分量的一个辐射分量的增加。 因此，半导体芯片发射具有放大的辐射分量的极化的偏振辐射。 衰减的辐射分量保留在半导体芯片中的光学结构，其将残留在半导体芯片中的衰减的辐射分量的至少一部分的偏振转换为放大的辐射分量的偏振，以及与输出侧相反的反射后侧。