- 专利标题： Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors
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申请号： US14942775申请日： 2015-11-16
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公开(公告)号： US09315671B2公开(公告)日： 2016-04-19
- 发明人: Yi Liu , Bo He , Andrew Pun
- 申请人： Yi Liu , Bo He , Andrew Pun
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Lawrence Berkeley National Laboratory
- 主分类号： C09K3/00
- IPC分类号： C09K3/00 ; C07D471/22 ; C09B7/02 ; H01L51/00 ; H01L51/05
摘要：
A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.
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