Invention Grant
- Patent Title: Three dimensional three semiconductor high-voltage capacitors
- Patent Title (中): 三维三极管高压电容器
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Application No.: US14489403Application Date: 2014-09-17
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Publication No.: US09318337B2Publication Date: 2016-04-19
- Inventor: Xiangzheng Bo , Douglas T. Grider
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Frank D. Cimino
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/28 ; H01L27/06 ; H01L29/94 ; H01L27/115 ; H01L49/02
Abstract:
An integrated circuit capacitor. The capacitor includes a substrate, a first conductor, and a first insulating region between the first conductor and the substrate. The capacitor also includes a second conductor, a second insulating region between the first conductor and the second conductor, a third conductor, and a third insulating region between the first conductor and the third conductor. The capacitor also includes a fourth conductor and a fourth insulating region between the first conductor and the fourth conductor.
Public/Granted literature
- US20150076577A1 Three Dimensional Three Semiconductor High-Voltage Capacitors Public/Granted day:2015-03-19
Information query
IPC分类:
