Invention Grant
- Patent Title: Integrated cluster to enable next generation interconnect
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Application No.: US14923957Application Date: 2015-10-27
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Publication No.: US09318383B2Publication Date: 2016-04-19
- Inventor: Mehul B. Naik , Abhijit Basu Mallick , Kiran V. Thadani , Zhenjiang Cui
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768
Abstract:
Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.
Public/Granted literature
- US20160049331A1 INTEGRATED CLUSTER TO ENABLE NEXT GENERATION INTERCONNECT Public/Granted day:2016-02-18
Information query
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