Invention Grant
- Patent Title: Transistor device and materials for making
- Patent Title (中): 晶体管器件和制造材料
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Application No.: US14006158Application Date: 2012-03-22
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Publication No.: US09318591B2Publication Date: 2016-04-19
- Inventor: Andre Geim , Konstantin Novoselov , Roman Gorbachev , Leonid Ponomarenko , Liam Britnell
- Applicant: Andre Geim , Konstantin Novoselov , Roman Gorbachev , Leonid Ponomarenko , Liam Britnell
- Applicant Address: GB Manchester
- Assignee: The University of Manchester
- Current Assignee: The University of Manchester
- Current Assignee Address: GB Manchester
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Priority: GB1104824.6 20110322; GB1119972.6 20111118; GB1201759.6 20120201
- International Application: PCT/GB2012/050641 WO 20120322
- International Announcement: WO2012/127244 WO 20120927
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/775 ; H01L29/20 ; H01L29/267 ; H01L29/417 ; H01L29/51 ; H01L21/02 ; H01L29/06 ; H01L29/778
Abstract:
This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
Public/Granted literature
- US20140008616A1 TRANSISTOR DEVICE AND MATERIALS FOR MAKING Public/Granted day:2014-01-09
Information query
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