Invention Grant
- Patent Title: Optical measuring system and method of measuring critical size
- Patent Title (中): 光学测量系统及临界尺寸测量方法
-
Application No.: US13961305Application Date: 2013-08-07
-
Publication No.: US09322640B2Publication Date: 2016-04-26
- Inventor: Sergey Nikolaevich Koptyaev , Maxim Vladimirovich Ryabko , Alexander Vyacheslavovich Shcherbakov , Alexey Dmitrievich Lantsov
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSING ELECTRONICS CO., LTD.
- Current Assignee: SAMSING ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: RU2012133571 20120807; KR10-2013-0077295 20130702
- Main IPC: G01B11/02
- IPC: G01B11/02

Abstract:
Optical measuring systems for measuring geometrical parameters of nano-objects and methods of measuring a critical size (CS) are provided. The optical method of measuring the CS includes selecting parameters of an optic scheme and an illumination condition; recording a set of nanostructure images corresponding to various wavelengths with various defocusing levels of scattered radiation; calculating a plurality of sets of images of a nanostructure with various defocusing levels, corresponding to various wavelengths of the scattered radiation with CS values within a known range; and comparing a set of measured images of the nanostructure with the sets of the calculated images and determining a best approximate value of the CS values.
Public/Granted literature
- US20140043471A1 OPTICAL MEASURING SYSTEM AND METHOD OF MEASURING CRITICAL SIZE Public/Granted day:2014-02-13
Information query