发明授权
US09324670B2 Semiconductor device with copper-tin compound on copper connector
有权
铜连接器上带有铜锡复合物的半导体器件
- 专利标题： Semiconductor device with copper-tin compound on copper connector
- 专利标题（中）： 铜连接器上带有铜锡复合物的半导体器件
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申请号： US14157220申请日： 2014-01-16
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公开(公告)号： US09324670B2公开(公告)日： 2016-04-26
- 发明人: Chien Ling Hwang , Yi-Li Hsiao , Chung-Shi Liu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00
摘要：
An embodiment is a method for forming a semiconductor assembly including cleaning a connector including copper formed on a substrate, applying cold tin to the connector, applying hot tin to the connector, and spin rinsing and drying the connector.
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