Invention Grant
US09324898B2 Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
有权
沉积期间碲化镉生长温度的变化提高了太阳能电池的可靠性
- Patent Title: Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
- Patent Title (中): 沉积期间碲化镉生长温度的变化提高了太阳能电池的可靠性
-
Application No.: US14036229Application Date: 2013-09-25
-
Publication No.: US09324898B2Publication Date: 2016-04-26
- Inventor: David S. Albin , James Neil Johnson , Yu Zhao , Bastiaan Arie Korevaar
- Applicant: Alliance for Sustainable Energy, LLC , First Solar, Inc.
- Applicant Address: US CO Golden
- Assignee: Alliance For Sustainable Energy, LLC
- Current Assignee: Alliance For Sustainable Energy, LLC
- Current Assignee Address: US CO Golden
- Agent John C. Stolpa; Suzanne C. Walts
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/073 ; H01L21/02 ; H01L31/0296 ; H01L31/0368 ; H01L31/18

Abstract:
A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.
Public/Granted literature
- US20140083505A1 VARYING CADMIUM TELLURIDE GROWTH TEMPERATURE DURING DEPOSITION TO INCREASE SOLAR CELL RELIABILITY Public/Granted day:2014-03-27
Information query
IPC分类: