A device, such as an integrated circuit including memory, includes an array of memory cells on a substrate. A row/column line, such as a local word line or local bit line, is disposed in the array. The row/column line includes a pass transistor structure comprising a semiconductor strip in a first patterned layer over the substrate. The semiconductor strip includes a semiconductor channel body, a contact region on one side of the semiconductor channel body, and an extension on another side of the semiconductor channel body, which reaches into the memory cells in the array. A select line in a second patterned layer crossing the semiconductor channel body is provided. The pass transistor structure can be implemented in a fanout structure for row/column lines in the array.