Invention Grant
US09330930B2 Plasma etching method and semiconductor device manufacturing method
有权
等离子体蚀刻方法和半导体器件制造方法
- Patent Title: Plasma etching method and semiconductor device manufacturing method
- Patent Title (中): 等离子体蚀刻方法和半导体器件制造方法
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Application No.: US14615725Application Date: 2015-02-06
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Publication No.: US09330930B2Publication Date: 2016-05-03
- Inventor: Kazuhiro Kubota , Masanobu Honda , Takayuki Katsunuma
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-210945 20110927; JP2011-214927 20110929
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3065 ; H01J37/32 ; H01L21/311 ; H01L21/768 ; H01L21/66 ; H01L21/308
Abstract:
A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas.
Public/Granted literature
- US20150187588A1 PLASMA ETCHING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-07-02
Information query
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