Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14285718Application Date: 2014-05-23
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Publication No.: US09330940B2Publication Date: 2016-05-03
- Inventor: Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-056063 20010228; JP2001-302687 20010928
- Main IPC: H01L21/48
- IPC: H01L21/48 ; G02F1/1345 ; G02F1/1362 ; H01L27/12 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; H01L21/02
Abstract:
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
Public/Granted literature
- US20140256116A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2014-09-11
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