Invention Grant
US09331262B2 Thin film piezoelectric element, thin film piezoelectric actuator, thin film piezoelectric sensor, hard drive disk, and inkjet printer device
有权
薄膜压电元件,薄膜压电致动器,薄膜压电传感器,硬盘驱动盘和喷墨打印机装置
- Patent Title: Thin film piezoelectric element, thin film piezoelectric actuator, thin film piezoelectric sensor, hard drive disk, and inkjet printer device
- Patent Title (中): 薄膜压电元件,薄膜压电致动器,薄膜压电传感器,硬盘驱动盘和喷墨打印机装置
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Application No.: US13898110Application Date: 2013-05-20
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Publication No.: US09331262B2Publication Date: 2016-05-03
- Inventor: Kazuhiko Maejima , Yasuhiro Aida , Yoshitomo Tanaka , Katsuyuki Kurachi , Hitoshi Sakuma
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Main IPC: H01L41/187
- IPC: H01L41/187 ; C04B35/00 ; H01L41/08 ; B41J2/14 ; G01L9/00 ; G11B5/55 ; H01L41/316 ; B41J2/16 ; G01C19/5621 ; G01C19/5628

Abstract:
A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.
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