公开(公告)号：US11742119B2

公开(公告)日：2023-08-29

申请号：US17202424

申请日：2021-03-16

Applicant: TDK Corporation

Inventor： Masashi Miwa ,  Yoshitomo Tanaka ,  Koji Miura ,  Taeko Tsubokura

IPC: H01F41/02 ,  H01F1/057 ,  C22C38/00 ,  C22C38/16 ,  C22C38/06 ,  C22C38/14 ,  C22C38/10

CPC classification number: H01F1/057 ,  C22C38/002 ,  C22C38/005 ,  C22C38/06 ,  C22C38/10 ,  C22C38/14 ,  C22C38/16 ,  C22C2202/02

Abstract: Provided is a permanent magnet including a rare-earth element R (such as Nd), a transition metal element T (such as Fe), B, Zr, and Cu. The permanent magnet contains a plurality of main phase grains including Nd, T, and B, and grain boundary multiple junctions, the one grain boundary multiple junction is a grain boundary surrounded by three or more of the main phase grains, one of the grain boundary multiple junctions contains a ZrB2 crystal and an R—Cu-rich phase including R and Cu, Fe is contained in the ZrB2 crystal, a total concentration of Nd and Pr in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a total concentration of Nd and Pr in the main phase grain, a concentration of Cu in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a concentration of Cu in the main phase grain, and a unit of the concentration of each of Nd, Pr, and Cu is atomic %.

公开(公告)号：US09331262B2

公开(公告)日：2016-05-03

申请号：US13898110

申请日：2013-05-20

Applicant: TDK CORPORATION

Inventor： Kazuhiko Maejima ,  Yasuhiro Aida ,  Yoshitomo Tanaka ,  Katsuyuki Kurachi ,  Hitoshi Sakuma

IPC: H01L41/187 ,  C04B35/00 ,  H01L41/08 ,  B41J2/14 ,  G01L9/00 ,  G11B5/55 ,  H01L41/316 ,  B41J2/16 ,  G01C19/5621 ,  G01C19/5628

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2202/03 ,  G01C19/5621 ,  G01C19/5628 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract translation: 根据本发明的薄膜压电元件包括​​具有多个晶粒在膜厚度方向上存在的结构的铌酸钾钠薄膜; 和一对夹着铌酸钾钠薄膜的电极膜。 当铌酸钾薄膜在膜厚度方向上分为相同厚度的三个区域并确定各个区域的平均晶粒尺寸A1，A2和A3时，最小平均晶粒的比率m / M A1，A2和A3之间的尺寸m为A1，A2和A3之间的最大平均晶粒尺寸M为10％至80％。 具有最小平均晶粒尺寸m的区域紧邻该对电极膜中的一个。

公开(公告)号：US10109788B2

公开(公告)日：2018-10-23

申请号：US15559195

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Katsuyuki Nakada ,  Yoshitomo Tanaka

IPC: H01L45/00 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US11489109B2

公开(公告)日：2022-11-01

申请号：US16952274

申请日：2020-11-19

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa ,  Minoru Ota ,  Tomoyuki Sasaki ,  Yoshitomo Tanaka

IPC: H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L27/22 ,  G11C13/00

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

公开(公告)号：US11367834B2

公开(公告)日：2022-06-21

申请号：US17000481

申请日：2020-08-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Katsuyuki Nakada ,  Yoshitomo Tanaka

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  G11B5/39 ,  H01L43/02

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US09130169B2

公开(公告)日：2015-09-08

申请号：US13827126

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Yoshitomo Tanaka ,  Hitoshi Sakuma ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16 ,  H01L41/08 ,  G01L9/00 ,  H01L41/09

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract translation: 压电元件作为压电体层包含作为由通式ABO3表示的钙钛矿化合物的铌酸钾钠的薄膜，其中Sr（锶）在A位置和B位都被取代，Mn（ 锰）仅在A位置上被取代。 因此，提供了使用铌酸钾钠薄膜来降低压电元件的泄漏电流的压电元件，以提高其耐压并提高其压电特性。

公开(公告)号：US09022532B1

公开(公告)日：2015-05-05

申请号：US14058912

申请日：2013-10-21

Applicant: TDK Corporation

Inventor： Yasuhiro Aida ,  Ryu Ohta ,  Yoshitomo Tanaka ,  Hiroshi Chihara ,  Hitoshi Sakuma ,  Kazuhiko Maejima

IPC: B41J2/045 ,  H01L41/08 ,  H01L41/187 ,  G01L1/16

CPC classification number: H01L41/0805 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract translation: 可以增加作为致动器的位移或作为压电元件的传感器的灵敏度，并且另外可以通过提供作为钙钛矿型化合物的铌酸钾钠的薄膜来降低电力消耗， 通式ABO3作为压电层，其中铌酸钾钠的晶体结构的晶体取向作为整体压电层的面内四重对称，其中旋转对称的第一轴是压电层的厚度方向。

公开(公告)号：US10884078B2

公开(公告)日：2021-01-05

申请号：US16794927

申请日：2020-02-19

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yoshitomo Tanaka

IPC: H01L43/10 ,  G01R33/09 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L21/8239 ,  H01L43/06 ,  H01L43/04 ,  H01L41/20 ,  H01L45/00 ,  G11C13/00 ,  H01F10/32 ,  H01L43/12

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

公开(公告)号：US10790440B2

公开(公告)日：2020-09-29

申请号：US16587178

申请日：2019-09-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Katsuyuki Nakada ,  Yoshitomo Tanaka

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  G11B5/39

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US10522592B2

公开(公告)日：2019-12-31

申请号：US16080971

申请日：2017-10-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yoshitomo Tanaka

IPC: H01L27/22 ,  H01F10/32 ,  G11C11/16 ,  H01L23/522 ,  H01L43/02 ,  H01L43/12 ,  H01F41/34 ,  H01L23/528 ,  H01L43/10

Abstract: A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.