Invention Grant
- Patent Title: Memory channel having deskew separate from redrive
- Patent Title (中): 具有偏移的记忆体通道与重新分开
-
Application No.: US14306025Application Date: 2014-06-16
-
Publication No.: US09335373B2Publication Date: 2016-05-10
- Inventor: Pete D. Vogt
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agent Marger Johnson
- Main IPC: G01R31/317
- IPC: G01R31/317 ; G11C11/40 ; G11C7/10 ; G11C11/4093 ; G06F11/07

Abstract:
A memory module may have a redrive circuit having a plurality of redrive paths, a memory device, and a deskew circuit. The deskew circuit may be separate from the plurality of redrive paths. The deskew circuit may be coupled between the plurality of redrive paths and the memory device to selectively deskew data received in the redrive circuit.
Public/Granted literature
- US20150046760A1 MEMORY CHANNEL HAVING DESKEW SEPARATE FROM REDRIVE Public/Granted day:2015-02-12
Information query