Invention Grant
- Patent Title: Program-disturb decoupling for adjacent wordlines of a memory device
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Application No.: US14807796Application Date: 2015-07-23
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Publication No.: US09336843B2Publication Date: 2016-05-10
- Inventor: Ferdinando Bedeschi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C11/08 ; G11C13/00 ; G11C8/08 ; G06F12/02

Abstract:
Subject matter disclosed herein relates to memory operations regarding programming bits into a memory array.
Public/Granted literature
- US20150325293A1 PROGRAM-DISTURB DECOUPLING FOR ADJACENT WORDLINES OF A MEMORY DEVICE Public/Granted day:2015-11-12
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