发明授权
- 专利标题: Graphene growth on a carbon-containing semiconductor layer
- 专利标题(中): 含碳半导体层上的石墨烯生长
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申请号: US13443003申请日: 2012-04-10
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公开(公告)号: US09337026B2公开(公告)日: 2016-05-10
- 发明人: Jack O. Chu , Christos D. Dimitrakopoulos , Alfred Grill , Chun-yung Sung
- 申请人: Jack O. Chu , Christos D. Dimitrakopoulos , Alfred Grill , Chun-yung Sung
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; B82Y30/00 ; B82Y40/00 ; C01B31/04
摘要:
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.