摘要:
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.
摘要:
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.
摘要:
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.
摘要:
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.
摘要:
A semiconductor structure includes a first dielectric material including at least one first conductive region contained therein. The structure also includes at least one graphene containing semiconductor device located atop the first dielectric material. The at least one graphene containing semiconductor device includes a graphene layer that overlies and is in direct with the first conductive region. The structure further includes a second dielectric material covering the at least one graphene containing semiconductor device and portions of the first dielectric material. The second dielectric material includes at least one second conductive region contained therein, and the at least one second conductive region is in contact with a conductive element of the at least one graphene containing semiconductor device.
摘要:
The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. In the semiconductor structure of the present invention, a dual trench isolation scheme is employed whereby a first trench isolation region of a first depth isolates devices of different polarity from each other, while second trench isolation regions of a second depth, which is shallower than the first depth, are used to isolate devices of the same polarity from each other. The present invention further provides a dual trench semiconductor structure in which pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane. In accordance with the present invention, the devices of different polarity, i.e., nFETs and pFETs, are bulk-like devices.
摘要:
Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.
摘要:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
摘要:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
摘要:
A deep trench capacitor used in a trench DRAM includes a buried plate and an isolation collar. The deep trench is bottle-shaped, and the isolation collar is formed in upper portion of the wider region of the bottle-shaped trench. The buried plate surrounds the lower portion of the wider part of the bottle-shaped trench, and hemispherical grain polysilicon lines the walls of at least the lower portion of the wider part of the trench. A nitride liner layer lines the inner walls of the oxide collar and prevents diffusion of dopant through the oxide collar into the substrate when the HSG polysilicon and the doped buried plate are formed. The buried plate region is self-aligned to the isolation collar. The depth of the top of the wider part of the bottle shape and the bottom depth of the isolation collar are determined by successive resist deposition and recessing steps.