Invention Grant
US09337030B2 Method to grow in-situ crystalline IGZO using co-sputtering targets
有权
使用共溅射靶生长原位结晶IGZO的方法
- Patent Title: Method to grow in-situ crystalline IGZO using co-sputtering targets
- Patent Title (中): 使用共溅射靶生长原位结晶IGZO的方法
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Application No.: US14549158Application Date: 2014-11-20
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Publication No.: US09337030B2Publication Date: 2016-05-10
- Inventor: Seon-Mee Cho , Stuart Brinkley , Anh Duong , Majid Gharghi , Sang Lee , Minh Huu Le , Karl Littau , Jingang Su
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786
Abstract:
A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.
Public/Granted literature
- US20150279670A1 Novel Method to Grow In-Situ Crystalline IGZO Public/Granted day:2015-10-01
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