公开(公告)号：US20140183036A1

公开(公告)日：2014-07-03

申请号：US13728096

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Kent Riley Child ,  Jingang Su

IPC: G01B11/24

CPC classification number: H01J37/3476 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3479 ,  H01J37/3482

Abstract: Methods and systems for in situ measuring sputtering target erosion are disclosed. The emission of material from the sputtering target is stopped, a distance sensor is scanned across a radial line on the sputtering target. The sputtering chamber contains a controlled environment separate and distinct from the environment outside the chamber, and the controlled environment is maintained during the scanning The resulting distance data is converted into a surface profile of the sputtering target. The accuracy of the surface profile can be less than about ±1 μm. The distance sensor is protected from deposition of the material from the sputtering target. End-of-life for a sputtering target can be determined by obtaining a surface profile of the sputtering target at regular intervals and replacing the sputtering target when the thinnest location on the target as measured by the surface profile is below a predetermined threshold.

Abstract translation: 公开了用于原位测量溅射靶侵蚀的方法和系统。 停止从溅射靶发射材料，通过溅射靶上的径向线扫描距离传感器。 溅射室包含与室外环境分离和不同的受控环境，并且在扫描期间保持受控环境。所得到的距离数据被转换成溅射靶的表面轮廓。 表面轮廓的精度可以小于约±1μm。 保护距离传感器免受溅射靶材料的沉积。 溅射靶的寿命终止可以通过以规则的间隔获得溅射靶的表面轮廓并且当由表面轮廓测量的靶上的最薄位置低于预定阈值时，代替溅射靶来确定。

公开(公告)号：US09337030B2

公开(公告)日：2016-05-10

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US20150184298A1

公开(公告)日：2015-07-02

申请号：US14660772

申请日：2015-03-17

Applicant: Intermolecular, Inc.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

公开(公告)号：US09023438B2

公开(公告)日：2015-05-05

申请号：US13716829

申请日：2012-12-17

Applicant: Intermolecular, Inc.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

IPC: H05H1/24 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

公开(公告)号：US08945414B1

公开(公告)日：2015-02-03

申请号：US14079442

申请日：2013-11-13

Applicant: Intermolecular Inc.

Inventor： Jingang Su ,  Ashish Bodke ,  Abhijit Pethe ,  J Watanabe

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L22/12 ,  H01L22/26

Abstract: Oxides (e.g., native or thermal silicon oxide) are etched from underlying silicon with a mixture of fluorine and oxygen radicals generated by a remote plasma. The oxygen radicals rapidly oxidize any uncovered bare silicon areas, preventing the pitting that can result from fluorine etching bare silicon more rapidly than it etches the surrounding oxide. A very thin (few Å), highly uniform passivation layer remaining on the silicon after the process may be left in place or removed. An oxygen-impermeable layer may be formed in-situ immediately afterward to prevent further oxidation. A pre-treatment with oxygen radicals alone fills pores and gaps in the oxide before etching begins.

Abstract translation: 通过由远程等离子体产生的氟和氧自由基的混合物从下面的硅蚀刻氧化物（例如天然或热氧化硅）。 氧自由基快速氧化任何未覆盖的裸硅区域，防止氟蚀刻裸硅的点蚀比其蚀刻周围氧化物更快。 在该过程之后残留在硅上的非常薄（几埃）的高度均匀的钝化层可能留在原位或去除。 可以立即就地形成不透氧层，以防止进一步的氧化。 单独的氧自由基的预处理在蚀刻开始之前填充氧化物中的孔隙和间隙。

公开(公告)号：US20150279670A1

公开(公告)日：2015-10-01

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US20140170335A1

公开(公告)日：2014-06-19

申请号：US13716829

申请日：2012-12-17

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

IPC: C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

公开(公告)号：US09297775B2

公开(公告)日：2016-03-29

申请号：US14285921

申请日：2014-05-23

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

IPC: H01L27/20 ,  G01N27/20 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  G01N27/04

CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

公开(公告)号：US20150338362A1

公开(公告)日：2015-11-26

申请号：US14285921

申请日：2014-05-23

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

IPC: G01N27/20 ,  G01N27/04 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54

CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

Abstract translation: 使用通过不同大小的孔溅射或共溅射的测试结构组合地筛选用于小规模互连（例如铜）的阻挡层，阻挡层和种子层。 在退火之前和/或之后测量与导电性，扩散阻挡和粘附有关的各种特性（例如，电阻率，结晶形态，表面粗糙度）并进行比较以获得材料和工艺参数，以通过互连实现高导电性的低扩散。 示例结果表明，一些钽 - 钛屏障的配方可以替代较厚的钽/氮化钽叠层，在某些情况下可以在Ta-Ti和铜之间具有Cu-Mn种子层。

公开(公告)号：US20140174918A1

公开(公告)日：2014-06-26

申请号：US13721419

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Hong Sheng Yang ,  Kent Riley Child ,  Chi-I Lang ,  Jingang Su ,  Danny Wang

IPC: C23C14/35

CPC classification number: C23C14/352 ,  C23C14/50 ,  C23C14/548 ,  H01J37/3405 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3497

Abstract: A sputter gun is provided. The sputter gun includes a target and a first plate coupled to a surface of the target. A first magnet is disposed over a second magnet. A second plate coupled to a surface of the first magnet and a gap is defined between a surface of the second magnet and a surface of the first plate. A fluid inlet and a fluid outlet are disposed above a surface of the first magnet. A restriction bar is coupled to the second plate, wherein the restriction bar is configured to prevent a flow path of fluid through the first inlet to the second inlet unless the fluid traverses the gap defined between a surface of the second magnet and a surface of the first plate. Alternative configurations of the sputter gun are included.

Abstract translation: 提供溅射枪。 溅射枪包括目标和耦合到靶的表面的第一板。 第一磁体设置在第二磁体上。 耦合到第一磁体的表面的第二板和间隙限定在第二磁体的表面和第一板的表面之间。 流体入口和流体出口设置在第一磁体的表面上方。 限制杆联接到第二板，其中限制杆被配置为防止流体通过第二入口的第一入口的流动路径，除非流体穿过限定在第二磁体的表面与第二磁体的表面之间的间隙 第一盘。 包括溅射枪的替代配置。