公开(公告)号：US20150279670A1

公开(公告)日：2015-10-01

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US20150187574A1

公开(公告)日：2015-07-02

申请号：US14140797

申请日：2013-12-26

Applicant: LG Display Co. Ltd. ,  Intermolecular Inc.

Inventor： Minh Huu Le ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Sang Lee ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02631 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO) with intra-layer variations and methods for forming such IGZO. At least a portion of a substrate is positioned in a processing chamber. A first sub-layer of an IGZO layer is formed above the at least a portion of the substrate while the at least a portion of the substrate is in the processing chamber. The first sub-layer of the IGZO layer is formed using a first set of processing conditions. A second sub-layer of the IGZO layer is formed above the first sub-layer of the IGZO layer while the at least a portion of the substrate is in the processing chamber. The second sub-layer of the IGZO layer is formed using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

Abstract translation: 本文所述的实施方案提供了具有层内变化的晶体铟镓锌氧化物（IGZO）的方法和用于形成这种IGZO的方法。 衬底的至少一部分位于处理室中。 在基板的至少一部分上方形成IGZO层的第一子层，同时基板的至少一部分位于处理室中。 使用第一组处理条件形成IGZO层的第一子层。 IGZO层的第二子层形成在IGZO层的第一子层的上方，而基板的至少一部分在处理室内。 IGZO层的第二子层使用第二组处理条件形成。 第二组处理条件与第一组处理条件不同。

公开(公告)号：US20140264320A1

公开(公告)日：2014-09-18

申请号：US14134678

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Jeroen Van Duren

IPC: H01L27/12

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

Abstract translation: 作为穿过该层的深度的函数，引入金属基半导体层的至少一个元素的组成的梯度。 梯度影响器件在不同栅极电压下的电流密度响应。 在一些实施例中，元件（例如Ga）的组成在金属基半导体层和源极/漏极层之间的界面处较大。 梯度轮廓的形状是直线，阶梯，抛物线，指数等之一。

公开(公告)号：US09722049B2

公开(公告)日：2017-08-01

申请号：US14138750

申请日：2013-12-23

Applicant: Intermolecular Inc. ,  LG Display Co., Ltd.

Inventor： Sang Lee ,  Khaled Ahmed ,  Youn-Gyoung Chang ,  Min-Cheol Kim ,  Minh Huu Le ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/00 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.

公开(公告)号：US20170084643A1

公开(公告)日：2017-03-23

申请号：US15264822

申请日：2016-09-14

Applicant: Intermolecular, Inc.

Inventor： Gaurav Saraf ,  Howard Lin ,  Prashant Phatak ,  Sang Lee ,  Minh Huu Le ,  Hieu Pham ,  Congwen Yi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/285 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/2855 ,  H01L27/1259 ,  H01L28/60

Abstract: Embodiments provided herein describe storage capacitors for active matrix displays and methods for making such capacitors. A substrate is provided. A bottom electrode is formed above the substrate. A dielectric layer is formed above the bottom electrode. A top electrode is formed above the dielectric layer. A layer including an amorphous or crystalline material may be formed between the dielectric layer and the top electrode. The bottom electrode may have a thickness of at least 1000 Å, be formed in a gaseous environment of at least 95% argon, and/or not undergo an annealing process before the formation of a dielectric layer above the bottom electrode. The dielectric layer may include a nitrided high-k dielectric material.

公开(公告)号：US09337030B2

公开(公告)日：2016-05-10

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US20150179446A1

公开(公告)日：2015-06-25

申请号：US14137749

申请日：2013-12-20

Applicant: LG DISPLAY CO., LTD. ,  INTERMOLECULAR, INC.

Inventor： Sang Lee ,  Stuart Brinkley ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A layer is formed above the substrate using a PVD process. The layer includes indium, gallium, zinc, or a combination thereof. The PVD process is performed in a gaseous environment having a pressure of between about 1 mT and about 5 mT and including between about 20% and about 100% oxygen gas. The PVD process may be performed at a processing temperature between about 25° C. and about 400° C. The duty cycle of the PVD process may be between about 70% and about 100%.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 使用PVD工艺在衬底上形成一层。 该层包括铟，镓，锌或其组合。 PVD工艺在压力为约1mT至约5mT，包括约20％至约100％氧气的气态环境中进行。 PVD工艺可以在约25℃至约400℃的加工温度下进行.RPC工艺的占空比可以在约70％至约100％之间。

公开(公告)号：US20150179444A1

公开(公告)日：2015-06-25

申请号：US14139195

申请日：2013-12-23

Applicant: LG Display Co., Ltd. ,  Intermolecular, Inc.

Inventor： Sang Lee ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is positioned relative to at least one target. The at least one target includes indium, gallium, zinc, or a combination thereof. A substantially constant voltage is provided across the substrate and the at least one target to cause a plasma species to impact the at least one target. The impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an IGZO layer above the substrate.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 衬底相对于至少一个靶定位。 所述至少一个靶包括铟，镓，锌或其组合。 在衬底和至少一个靶上提供基本上恒定的电压，以使等离子体物质影响至少一个靶。 等离子体物质对至少一个靶材的影响使材料从至少一个靶材喷出，以在基底上方形成IGZO层。

公开(公告)号：US20150179442A1

公开(公告)日：2015-06-25

申请号：US14138750

申请日：2013-12-23

Applicant: LG Display Co., Ltd. ,  Intermolecular Inc.

Inventor： Sang Lee ,  Khaled Ahmed ,  Yoon-Kyung Chang ,  Min-Cheol Kim ,  Minh Huu Le ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 种子层形成在衬底上。 种子层具有沿着c轴基本上占优势的晶体结构。 在种子层上方形成IGZO层。 种子层可以包括氧化锌。 可以形成交替种子层和IGZO层的堆叠。

公开(公告)号：US20140178583A1

公开(公告)日：2014-06-26

申请号：US13721472

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Jeroen Van Duren ,  Sang Lee ,  Sandeep Nijhawan

IPC: B05D5/00

CPC classification number: G02F1/0147 ,  C23C14/3464 ,  C23C14/505

Abstract: Embodiments provided herein describe methods and systems for evaluating thermochromic material processing conditions. A plurality of site-isolated regions on at least one substrate are designated. A first thermochromic material is formed on a first of the plurality of site-isolated regions on the at least one substrate with a first set of processing conditions. A second thermochromic material is formed on a second of the plurality of site-isolated regions on the at least one substrate with a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

Abstract translation: 本文提供的实施例描述了用于评估热变色材料加工条件的方法和系统。 指定至少一个基板上的多个位置隔离区域。 第一热变色材料在具有第一组处理条件的至少一个衬底上的多个位置隔离区域的第一个上形成。 在第二组加工条件下，在至少一个基板上的多个位置隔离区域的第二个上形成第二热变色材料。 第二组处理条件与第一组处理条件不同。