发明授权
- 专利标题： Power semiconductor device and the preparation method
- 专利标题（中）： 功率半导体器件及其制备方法
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申请号： US14500982申请日： 2014-09-29
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公开(公告)号： US09337131B2公开(公告)日： 2016-05-10
- 发明人: Yan Huo , Hamza Yilmaz , Jun Lu , Ming-Chen Lu , Zhi Qiang Niu , Yan Xun Xue , Demei Gong
- 申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha and Omega Semiconductor (Cayman) Ltd.
- 当前专利权人： Alpha and Omega Semiconductor (Cayman) Ltd.
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Chein-Hwa S. Tsao; Chen-Chi Lin
- 主分类号： H01L23/495
- IPC分类号： H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L21/78 ; H01L21/48 ; H01L21/3213 ; H01L21/3105
摘要：
An ultrathin power semiconductor package with high thermal dissipation performance and its preparation method are disclosed. The package includes a lead frame unit with a staggered structure including an upper section and a lower section. A thin layer is attached on the surface of the lead frame unit having a plurality of contact holes on the upper section and at least one opening on the lower section. A semiconductor chip is attached on the opening on the lower section of the lead frame unit and then a plurality of metal bumps are deposited, where one metal bump is formed on each contact hole on the upper section and on each of the electrodes on the top surface of the semiconductor chip.
公开/授权文献
- US20160093560A1 POWER SEMICONDUCTOR DEVICE AND THE PREPARATION METHOD 公开/授权日：2016-03-31
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