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18 条记录 (耗时 0.023 秒)

    SEMICONDUCTOR PACKAGE HAVING HIGH MECHANICAL STRENGTH
    1.
    发明申请
    SEMICONDUCTOR PACKAGE HAVING HIGH MECHANICAL STRENGTH 审中-公开

    公开(公告)号：US20190189569A1

    公开(公告)日：2019-06-20

    申请号：US15849295

    申请日：2017-12-20

    申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

    发明人： Long-Ching Wang ,  Zhen Du ,  Bo Chen ,  Jun Lu ,  Yueh-Se Ho

    IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/78 ,  H01L23/48

    CPC分类号： H01L23/562 ,  H01L21/02032 ,  H01L21/78 ,  H01L23/481 ,  H01L24/06 ,  H01L2221/68318

    摘要： A semiconductor wafer is singulated to form a plurality of semiconductor packages. The semiconductor wafer has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A semiconductor package has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A thickness of the rigid supporting layer is larger than a thickness of the semiconductor substrate. A thickness of the metal layer is thinner than the thickness of the semiconductor substrate. An entirety of the rigid supporting layer may be made of a single crystal silicon material or a poly-crystal silicon material. The single crystal silicon material or the poly-crystal silicon material may be fabricated from a reclaimed silicon wafer. An advantage of using a reclaimed silicon wafer is for a cost reduction.

    MOLDED INTELLIGENT POWER MODULE FOR MOTORS
    3.
    发明申请
    MOLDED INTELLIGENT POWER MODULE FOR MOTORS 审中-公开

    公开(公告)号：US20190006270A1

    公开(公告)日：2019-01-03

    申请号：US16122690

    申请日：2018-09-05

    申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

    发明人： Zhiqiang Niu ,  Bum-Seok Suh ,  Jun Lu ,  Son Tran ,  Wanki Hong ,  Guobing Shen ,  Xiaoguang Zeng ,  Mary Jane R. Alin

    IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L27/06

    摘要： An intelligent power module (IPM) has a first, second, third and fourth die supporting elements, a first, second, third, fourth, fifth and sixth transistors, a connection member, a low voltage IC, a high voltage IC, a plurality of leads and a molding encapsulation. The first transistor is attached to the first die supporting element. The second transistor is attached to the second die supporting element. The third transistor is attached to the third die supporting element. The fourth, fifth and sixth transistor s are attached to the fourth die supporting element. The low and high voltage ICs are attached to the connection member. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first, second, third, fourth, fifth and sixth transistors, the connection member and the low and high voltage ICs. The IPM has a reduced thermal resistance of junction-to-case (RthJC) compared to a conventional IPM.

    Semiconductor package having high mechanical strength
    5.
    发明授权
    Semiconductor package having high mechanical strength 有权

    公开(公告)号：US10991660B2

    公开(公告)日：2021-04-27

    申请号：US15849295

    申请日：2017-12-20

    申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

    发明人： Long-Ching Wang ,  Zhen Du ,  Bo Chen ,  Jun Lu ,  Yueh-Se Ho

    IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L23/48 ,  H01L21/78 ,  H01L23/31

    摘要： A semiconductor wafer is singulated to form a plurality of semiconductor packages. The semiconductor wafer has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A semiconductor package has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A thickness of the rigid supporting layer is larger than a thickness of the semiconductor substrate. A thickness of the metal layer is thinner than the thickness of the semiconductor substrate. An entirety of the rigid supporting layer may be made of a single crystal silicon material or a poly-crystal silicon material. The single crystal silicon material or the poly-crystal silicon material may be fabricated from a reclaimed silicon wafer. An advantage of using a reclaimed silicon wafer is for a cost reduction.

    Molded intelligent power module for motors
    6.
    发明授权
    Molded intelligent power module for motors 有权

    公开(公告)号：US10600727B2

    公开(公告)日：2020-03-24

    申请号：US16122690

    申请日：2018-09-05

    申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

    发明人： Zhiqiang Niu ,  Bum-Seok Suh ,  Jun Lu ,  Son Tran ,  Wanki Hong ,  Guobing Shen ,  Xiaoguang Zeng ,  Mary Jane R. Alin

    IPC分类号： H01L23/495 ,  H01L27/06 ,  H01L23/00 ,  H01L23/31

    摘要： An intelligent power module (IPM) has a first, second, third and fourth die supporting elements, a first, second, third, fourth, fifth and sixth transistors, a connection member, a low voltage IC, a high voltage IC, a plurality of leads and a molding encapsulation. The first transistor is attached to the first die supporting element. The second transistor is attached to the second die supporting element. The third transistor is attached to the third die supporting element. The fourth, fifth and sixth transistor s are attached to the fourth die supporting element. The low and high voltage ICs are attached to the connection member. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first, second, third, fourth, fifth and sixth transistors, the connection member and the low and high voltage ICs. The IPM has a reduced thermal resistance of junction-to-case (RthJC) compared to a conventional IPM.

    Molded intelligent power module and method of making the same
    9.
    发明授权
    Molded intelligent power module and method of making the same 有权

    公开(公告)号：US10396019B2

    公开(公告)日：2019-08-27

    申请号：US16170895

    申请日：2018-10-25

    申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

    发明人： Zhiqiang Niu ,  Bum-Seok Suh ,  Wonjin Cho ,  Jun Lu

    IPC分类号： H01L23/495 ,  H02P27/00 ,  H01L27/06 ,  H01L23/31 ,  H01L23/16 ,  H01L21/56 ,  H01L23/00

    摘要： An intelligent power module (IPM) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (MOSFETs), a tie bar, a metal slug, a plurality of spacers, a plurality of leads and a molding encapsulation. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar and the plurality of spacers. A bottom surface of the metal slug is exposed from the molding encapsulation. A process for fabricating the IPM comprises preparing the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar, the plurality of leads, the metal slug and the plurality of spacers and applying a molding process to form the molding encapsulation.

    Molded intelligent power module and method of making the same
    10.
    发明授权
    Molded intelligent power module and method of making the same 有权

    公开(公告)号：US10141249B2

    公开(公告)日：2018-11-27

    申请号：US15699985

    申请日：2017-09-08

    申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

    发明人： Zhiqiang Niu ,  Bum-Seok Suh ,  Wonjin Cho ,  Jun Lu

    IPC分类号： H01L23/495 ,  H02P27/00 ,  H01L27/06 ,  H01L23/31

    摘要： An intelligent power module (IPM) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (MOSFETs), a tie bar, a metal slug, a plurality of spacers, a plurality of leads and a molding encapsulation. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar and the plurality of spacers. A bottom surface of the metal slug is exposed from the molding encapsulation. A process for fabricating the IPM comprises preparing the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar, the plurality of leads, the metal slug and the plurality of spacers and applying a molding process to form the molding encapsulation.