Invention Grant
- Patent Title: Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating region
- Patent Title (中): 半导体装置及具有半绝缘区域的半导体装置的制造方法
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Application No.: US14503749Application Date: 2014-10-01
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Publication No.: US09337186B2Publication Date: 2016-05-10
- Inventor: Gerhard Schmidt , Daniel Schloegl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/06 ; H01L29/66 ; H01L29/861

Abstract:
A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure.
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Information query
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