Invention Grant
US09337186B2 Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating region 有权
半导体装置及具有半绝缘区域的半导体装置的制造方法

Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating region
Abstract:
A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure.
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