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US09337210B2 Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors 有权
垂直铁电场效应晶体管结构，包括一对垂直铁电场效应晶体管的结构，铁电场效应晶体管的垂直串和横向相对的垂直铁电场效应晶体管的垂直串

Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
Abstract:
A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating core and has a lateral wall thickness of 1 monolayer to 7 monolayers. A ferroelectric gate dielectric material encircles the transition metal dichalcogenide material. Conductive gate material encircles the ferroelectric gate dielectric material. The transition metal dichalcogenide material extends elevationally inward and elevationally outward of the conductive gate material. A conductive contact is directly against a lateral outer sidewall of the transition metal dichalcogenide material that is a) elevationally inward of the conductive gate material, or b) elevationally outward of the conductive gate material. Additional embodiments are disclosed.
Abstract(Chinese):

垂直铁电场效应晶体管结构包括隔离芯。 过渡金属二硫属元素材料环绕隔离芯并具有1个单层至7个单层的侧壁厚度。 铁电栅极电介质材料围绕过渡金属二硫属元素材料。 导电栅极材料围绕铁电栅极电介质材料。 过渡金属二硫属元素材料在导电栅极材料的高度向内和向外向外延伸。 导电接触件直接抵靠过渡金属二硫属化物材料的侧向外侧壁，其是导电栅极材料的顶部向内，或b）导电栅极材料的向外侧。 公开了其他实施例。

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