Invention Grant
- Patent Title: Method and apparatus for constructing an isolation capacitor in an integrated circuit
- Patent Title (中): 在集成电路中构造隔离电容器的方法和装置
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Application No.: US14199522Application Date: 2014-03-06
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Publication No.: US09337253B2Publication Date: 2016-05-10
- Inventor: Gregory Dix , Randy Yach
- Applicant: Microchip Technology Incorporated
- Applicant Address: US AZ Chandler
- Assignee: MICROCHIP TECHNOLOGY INCORPORATED
- Current Assignee: MICROCHIP TECHNOLOGY INCORPORATED
- Current Assignee Address: US AZ Chandler
- Agency: Slayden Grubert Beard PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02 ; H01L23/64 ; H01G4/40 ; H01G4/06 ; H03K17/689 ; H01L23/00 ; H04L25/02
Abstract:
At least one high voltage rated isolation capacitor is formed on a face of a primary integrated circuit die. The isolation capacitor AC couples the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitor DC isolates the primary integrated circuit from the second integrated circuit die.
Public/Granted literature
- US20140252551A1 Method and Apparatus for Constructing an Isolation Capacitor in an Integrated Circuit Public/Granted day:2014-09-11
Information query
IPC分类:
