发明授权
- 专利标题: Photoelectric conversion device and manufacturing method thereof
- 专利标题(中): 光电转换装置及其制造方法
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申请号: US13299768申请日: 2011-11-18
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公开(公告)号: US09337361B2公开(公告)日: 2016-05-10
- 发明人: Takashi Hirose , Naoto Kusumoto
- 申请人: Takashi Hirose , Naoto Kusumoto
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2010-263337 20101126
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L31/0224 ; H01L31/0747 ; H01L31/18
摘要:
In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode.
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