Invention Grant
US09337827B2 Electronic circuit with a reverse-conducting IGBT and gate driver circuit
有权
具有反向导通IGBT和栅极驱动电路的电子电路
- Patent Title: Electronic circuit with a reverse-conducting IGBT and gate driver circuit
- Patent Title (中): 具有反向导通IGBT和栅极驱动电路的电子电路
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Application No.: US13941797Application Date: 2013-07-15
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Publication No.: US09337827B2Publication Date: 2016-05-10
- Inventor: Dorothea Werber
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/567 ; H01L29/739 ; H01L29/06 ; H01L29/08

Abstract:
An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced.
Public/Granted literature
- US20150015309A1 Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver Circuit Public/Granted day:2015-01-15
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