Invention Grant
- Patent Title: Nanoimprint lithography for thin film heads
- Patent Title (中): 用于薄膜头的纳米压印光刻
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Application No.: US13791130Application Date: 2013-03-08
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Publication No.: US09343089B2Publication Date: 2016-05-17
- Inventor: Andrew David Habermas , Dongsung Hong , Daniel Boyd Sullivan
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: HolzerIPLaw, PC
- Main IPC: G11B5/31
- IPC: G11B5/31 ; B82Y10/00

Abstract:
Nanoimprint lithography can be used in a variety of ways to improve resolution, pattern fidelity and symmetry of microelectronic structures for thin film head manufacturing. For example, write poles, readers, and near-field transducers can be manufactured with tighter tolerances that improve the performance of the microelectronic structures. Further, entire bars of thin film heads can be manufactured simultaneously using nanoimprint lithography, which reduces or eliminated alignment errors between neighboring thin film heads in a bar of thin film heads.
Public/Granted literature
- US20140254338A1 NANOIMPRINT LITHOGRAPHY FOR THIN FILM HEADS Public/Granted day:2014-09-11
Information query
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