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    Lapping Carrier System with Optimized Carrier Insert
    3.
    发明申请
    Lapping Carrier System with Optimized Carrier Insert 审中-公开

    公开(公告)号：US20190247976A1

    公开(公告)日：2019-08-15

    申请号：US15894081

    申请日：2018-02-12

    Applicant: Seagate Technology LLC

    Inventor： Yuhong Xiong ,  Andrew David Habermas ,  Kok Yen Goh ,  PengKoon Hew

    IPC: B24B37/30 ,  G11B5/31 ,  B24B37/005 ,  B24B37/04

    Abstract: Embodiments of the present disclosure demonstrate a lapping carrier system for a bar to be lapped. The lapping carrier system may be configured with a single piece insert whose bridge is separated from a plurality of joints of the carrier insert by a varying distance. The varying distance can be greater at a medial portion of the bridge than at an end portion of the bridge to collectively form a parabolic shape. In some embodiments, a lapping insert can include a bridge with its length longer than the bar. In some embodiments in a lapping insert, the centerline between the end joint edge and the end finger edge extends beyond the edge of bar.

    Nanoimprint lithography for thin film heads
    5.
    发明授权
    Nanoimprint lithography for thin film heads 有权
    用于薄膜头的纳米压印光刻

    公开(公告)号：US09343089B2

    公开(公告)日：2016-05-17

    申请号：US13791130

    申请日：2013-03-08

    Applicant: Seagate Technology LLC

    Inventor： Andrew David Habermas ,  Dongsung Hong ,  Daniel Boyd Sullivan

    IPC: G11B5/31 ,  B82Y10/00

    CPC classification number: G11B5/3163 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/314 ,  Y10S977/887

    Abstract: Nanoimprint lithography can be used in a variety of ways to improve resolution, pattern fidelity and symmetry of microelectronic structures for thin film head manufacturing. For example, write poles, readers, and near-field transducers can be manufactured with tighter tolerances that improve the performance of the microelectronic structures. Further, entire bars of thin film heads can be manufactured simultaneously using nanoimprint lithography, which reduces or eliminated alignment errors between neighboring thin film heads in a bar of thin film heads.

    Abstract translation: 纳米压印光刻可以以各种方式用于提高薄膜头制造的微电子结构的分辨率，图案保真度和对称性。 例如，写极点，读取器和近场换能器可以用更严格的公差制造，从而改善微电子结构的性能。 此外，可以使用纳米压印光刻法同时制造薄膜头的整个条，这减少或消除了薄膜头中的相邻薄膜头之间的对准误差。

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