发明授权
- 专利标题： Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light
- 专利标题（中）： 热处理方法和通过用光照射基板来加热基板的热处理装置
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申请号： US13417498申请日： 2012-03-12
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公开(公告)号： US09343313B2公开(公告)日： 2016-05-17
- 发明人: Kazuhiko Fuse , Shinichi Kato , Kenichi Yokouchi
- 申请人： Kazuhiko Fuse , Shinichi Kato , Kenichi Yokouchi
- 申请人地址： JP Kyoto
- 专利权人： SCREEN Holdings Co., Ltd.
- 当前专利权人： SCREEN Holdings Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Ostrolenk Faber LLP
- 优先权： JP2011-063735 20110323; JP2011-063736 20110323; JP2011-267631 20111207
- 主分类号： H01L21/263
- IPC分类号： H01L21/263 ; H01L21/324 ; H01L21/268 ; H01L21/67 ; H01L21/687 ; F27B17/00 ; H01L21/265
摘要：
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
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