公开(公告)号：US09437456B2

公开(公告)日：2016-09-06

申请号：US14176262

申请日：2014-02-10

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27D11/00 ,  H01L21/324 ,  F27B17/00 ,  F27D5/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

公开(公告)号：US07965927B2

公开(公告)日：2011-06-21

申请号：US11871241

申请日：2007-10-12

申请人： Kenichi Yokouchi ,  Jun Watanabe

发明人： Kenichi Yokouchi ,  Jun Watanabe

IPC分类号： A21B2/00

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： In a heat treatment apparatus, a holding part moves upwardly to receive a semiconductor wafer transported into a chamber and placed on support pins. The semiconductor wafer held in close proximity to a light-transmittable plate by the holding part is preheated by a hot plate, and is then flash-heated by a flash of light emitted from flash lamps. Thereafter, the holding part moves downwardly to transfer the semiconductor wafer to the support pins, and the semiconductor wafer is transported out of the chamber. Then, a new semiconductor wafer is transported into the chamber. The holding part is adapted to perform such a series of operations of moving upwardly and downwardly also when in a standby condition pending the transport of the first semiconductor wafer in a lot into the chamber.

摘要翻译： 在热处理装置中，保持部向上移动以接收输送到室中的半导体晶片并且放置在支撑销上。 通过保持部保持在可透光板附近的半导体晶片由热板预热，然后由闪光灯发出的闪光闪光加热。 此后，保持部分向下移动以将半导体晶片传送到支撑销，并且半导体晶片被输送出室外。 然后，将新的半导体晶片输送到室中。 保持部适于执行这样一系列的操作，即当处于备用状态时，向上和向下移动，等待将第一半导体晶片批量输送到腔室中。

公开(公告)号：US09082728B2

公开(公告)日：2015-07-14

申请号：US13177696

申请日：2011-07-07

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27D11/12 ,  H01L21/324 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66

CPC分类号： H01L21/324 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/68707 ,  H01L29/6659 ,  H05B3/0047

摘要： A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.

摘要翻译： 执行第一闪光加热，其中闪光灯通过来自卤素灯的发光将第一闪光发射到已经被加热到等于或低于650℃的第一预热温度的半导体晶片，使得温度 半导体晶片的表面达到1000℃以上。 然后，进行第二闪光加热，其中第二闪光被发射到被卤素灯的发光进一步加热的半导体晶片上。 进行第一次闪蒸加热可以抑制随后的第二次闪蒸加热时杂质的扩散。 在第二次闪光加热中，杂质被激活并引入晶体缺陷被回收。

公开(公告)号：US08802550B2

公开(公告)日：2014-08-12

申请号：US13603584

申请日：2012-09-05

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/22 ,  H01L21/38 ,  H01L21/24 ,  H01L21/40 ,  H01L21/00 ,  H01L21/145 ,  H01L21/16

CPC分类号： H01L21/67115 ,  H01L21/26513 ,  H01L21/2686

摘要： First flash irradiation from flash lamps is performed on an upper surface of a semiconductor wafer supported on a temperature equalizing ring of a holder to cause the semiconductor wafer to jump up from the temperature equalizing ring into midair. While the semiconductor wafer is in midair above the temperature equalizing ring, second flash irradiation from the flash lamps is performed on the upper surface of the semiconductor wafer to increase the temperature of the upper surface of the semiconductor wafer to a treatment temperature. Cracking in the semiconductor wafer is prevented because the second flash irradiation is performed while the semiconductor wafer is in midair and subject to no restraints.

摘要翻译： 在支撑在保持器的温度均衡环上的半导体晶片的上表面上进行来自闪光灯的第一闪光照射，以使半导体晶片从温度均衡环向上跳跃到空中。 当半导体晶片处于温度均衡环的空中时，在半导体晶片的上表面上执行来自闪光灯的第二闪光照射，以将半导体晶片的上表面的温度升高到处理温度。 由于在半导体晶片处于空中并且不受约束的情况下执行第二闪光照射，所以防止了半导体晶片的破裂。

公开(公告)号：US08498525B2

公开(公告)日：2013-07-30

申请号：US13293641

申请日：2011-11-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F24C7/00

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。

公开(公告)号：US20120114316A1

公开(公告)日：2012-05-10

申请号：US13293641

申请日：2011-11-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F27D11/12

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。

公开(公告)号：US08173937B2

公开(公告)日：2012-05-08

申请号：US11970002

申请日：2008-01-07

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27B5/14 ,  F27B5/18 ,  F27D11/02

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

摘要翻译： 连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。 连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。 来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是 衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。 这实现了深结的激活，而不会引起基板翘曲或开裂。

公开(公告)号：US20080190909A1

公开(公告)日：2008-08-14

申请号：US11970002

申请日：2008-01-07

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27D11/00 ,  F27B5/14

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

摘要翻译： 连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。 连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。 来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是 衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。 这实现了深结的激活，而不会引起基板翘曲或开裂。

公开(公告)号：US20080101780A1

公开(公告)日：2008-05-01

申请号：US11871241

申请日：2007-10-12

申请人： Kenichi YOKOUCHI ,  Jun WATANABE

发明人： Kenichi YOKOUCHI ,  Jun WATANABE

IPC分类号： F26B19/00

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： In a heat treatment apparatus, a holding part moves upwardly to receive a semiconductor wafer transported into a chamber and placed on support pins. The semiconductor wafer held in close proximity to a light-transmittable plate by the holding part is preheated by a hot plate, and is then flash-heated by a flash of light emitted from flash lamps. Thereafter, the holding part moves downwardly to transfer the semiconductor wafer to the support pins, and the semiconductor wafer is transported out of the chamber. Then, a new semiconductor wafer is transported into the chamber. The holding part is adapted to perform such a series of operations of moving upwardly and downwardly also when in a standby condition pending the transport of the first semiconductor wafer in a lot into the chamber.

摘要翻译： 在热处理装置中，保持部向上移动以接收输送到室中的半导体晶片并且放置在支撑销上。 通过保持部保持在可透光板附近的半导体晶片由热板预热，然后由闪光灯发出的闪光闪光加热。 此后，保持部分向下移动以将半导体晶片传送到支撑销，并且半导体晶片被输送出室外。 然后，将新的半导体晶片输送到室中。 保持部适于执行这样一系列的操作，即当处于备用状态时，向上和向下移动，等待将第一半导体晶片批量输送到腔室中。

公开(公告)号：US20130078822A1

公开(公告)日：2013-03-28

申请号：US13603584

申请日：2012-09-05

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/26

CPC分类号： H01L21/67115 ,  H01L21/26513 ,  H01L21/2686

摘要： First flash irradiation from flash lamps is performed on an upper surface of a semiconductor wafer supported on a temperature equalizing ring of a holder to cause the semiconductor wafer to jump up from the temperature equalizing ring into midair. While the semiconductor wafer is in midair above the temperature equalizing ring, second flash irradiation from the flash lamps is performed on the upper surface of the semiconductor wafer to increase the temperature of the upper surface of the semiconductor wafer to a treatment temperature. Cracking in the semiconductor wafer is prevented because the second flash irradiation is performed while the semiconductor wafer is in midair and subject to no restraints.

摘要翻译： 在支撑在保持器的温度均衡环上的半导体晶片的上表面上进行来自闪光灯的第一闪光照射，以使半导体晶片从温度均衡环向上跳跃到空中。 当半导体晶片处于温度均衡环的空中时，在半导体晶片的上表面上执行来自闪光灯的第二闪光照射，以将半导体晶片的上表面的温度升高到处理温度。 由于在半导体晶片处于空中并且不受约束的情况下执行第二闪光照射，所以防止了半导体晶片的破裂。