发明授权
- 专利标题： Split gate nanocrystal memory integration
- 专利标题（中）： 分离门纳米晶体存储器集成
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申请号： US14291359申请日： 2014-05-30
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公开(公告)号： US09343314B2公开(公告)日： 2016-05-17
- 发明人: Konstantin V. Loiko , Brian A. Winstead
- 申请人： Konstantin V. Loiko , Brian A. Winstead
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/788 ; H01L27/115 ; H01L29/792
摘要：
A method of making a split gate non-volatile memory (NVM) includes forming a charge storage layer on the substrate, depositing a first conductive layer, and depositing a capping layer. These layers are patterned to form a control gate stack. A second conductive layer is deposited over the substrate and is patterned to leave a first portion of the second conductive layer over a portion of the control gate stack and adjacent to a first side of the control gate stack. The first portion of the second conductive layer and the control gate stack are planarized to leave a dummy select gate from the first portion of the second conductive layer, where a top surface of a remaining portion of the first conductive layer is lower relative to a top surface of the dummy select gate. The dummy select gate is replaced with a select gate including metal.
公开/授权文献
- US20150348786A1 SPLIT GATE NANOCRYSTAL MEMORY INTEGRATION 公开/授权日：2015-12-03
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