Invention Grant
US09343583B2 Thin film transistor and thin film transistor array panel including the same
有权
薄膜晶体管和薄膜晶体管阵列面板包括它们
- Patent Title: Thin film transistor and thin film transistor array panel including the same
- Patent Title (中): 薄膜晶体管和薄膜晶体管阵列面板包括它们
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Application No.: US14678448Application Date: 2015-04-03
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Publication No.: US09343583B2Publication Date: 2016-05-17
- Inventor: Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0034099 20120402
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L29/786 ; H01L27/12 ; H01L21/02 ; H01L21/385 ; H01L21/441 ; H01L29/66 ; H01L29/417

Abstract:
A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.
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