Invention Grant
- Patent Title: Planar semiconductor ESD device and method of making same
- Patent Title (中): 平面半导体ESD器件及其制造方法
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Application No.: US14450887Application Date: 2014-08-04
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Publication No.: US09343590B2Publication Date: 2016-05-17
- Inventor: Chien-Hsin Lee , Mahadeva Iyer Natarajan , Manjunatha Prabhu , Anil Kumar , Ruchil Kumar Jain
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/06 ; H01L27/02 ; H01L29/66

Abstract:
An ESD device is provided for protecting a circuit from electrostatic discharge, and includes a planar diode having an anode and a cathode. The anode is electrically coupled to a signal path of the circuit, and the cathode is electrically coupled to a ground of the circuit. The ESD device is configured to be off during normal operation of the circuit and to turn on in response to an electrostatic discharge on the signal path. Two depletion regions in the device are separated by an isolation well. In response to the electrostatic discharge, the depletion regions modulate (e.g., widen and merge), providing a path for the discharge to the ground of the circuit.
Public/Granted literature
- US20160035906A1 PLANAR SEMICONDUCTOR ESD DEVICE AND METHOD OF MAKING SAME Public/Granted day:2016-02-04
Information query
IPC分类: