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公开(公告)号：US09343590B2
公开(公告)日：2016-05-17
申请号：US14450887
申请日：2014-08-04
申请人： GLOBALFOUNDRIES Inc.
IPC分类号： H01L29/861 , H01L29/06 , H01L27/02 , H01L29/66
CPC分类号： H01L29/8611 , H01L27/0255 , H01L29/0684 , H01L29/66128
摘要： An ESD device is provided for protecting a circuit from electrostatic discharge, and includes a planar diode having an anode and a cathode. The anode is electrically coupled to a signal path of the circuit, and the cathode is electrically coupled to a ground of the circuit. The ESD device is configured to be off during normal operation of the circuit and to turn on in response to an electrostatic discharge on the signal path. Two depletion regions in the device are separated by an isolation well. In response to the electrostatic discharge, the depletion regions modulate (e.g., widen and merge), providing a path for the discharge to the ground of the circuit.
摘要翻译： 提供ESD器件用于保护电路免受静电放电，并且包括具有阳极和阴极的平面二极管。 阳极电耦合到电路的信号路径，并且阴极电耦合到电路的地。 ESD装置被配置为在电路的正常操作期间关闭并且响应于信号路径上的静电放电而导通。 器件中的两个耗尽区由隔离阱隔开。 响应于静电放电，耗尽区域调制（例如，加宽和合并），提供用于放电到电路接地的路径。
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公开(公告)号：US11552192B2
公开(公告)日：2023-01-10
申请号：US16876098
申请日：2020-05-17
申请人： GLOBALFOUNDRIES INC.
发明人： Ruchil Kumar Jain , Alban Zaka
IPC分类号： H01L29/78 , H01L21/762 , H01L29/66
摘要： The present disclosure generally to semiconductor devices, and more particularly to semiconductor devices having high-voltage transistors integrated on a semiconductor-on-insulator substrate and methods of forming the same. The present disclosure provides a semiconductor device including a bulk substrate, a semiconductor layer above the bulk substrate, an insulating layer between the semiconductor layer and the bulk substrate, a source region and a drain region on the bulk substrate, a gate dielectric between the source region and the drain region, the gate dielectric having a first portion on the bulk substrate and a second portion on the semiconductor layer, and a gate electrode above the gate dielectric.
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