Invention Grant
- Patent Title: Semiconductor device and method for driving the same
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US14582319Application Date: 2014-12-24
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Publication No.: US09349418B2Publication Date: 2016-05-24
- Inventor: Yoshitaka Yamamoto , Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-271666 20131227; JP2014-047382 20140311
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C5/14 ; H01L27/108 ; H01L27/06 ; H01L29/786 ; G11C8/16 ; G11C11/405 ; G11C11/408 ; G11C11/56 ; H01L27/115

Abstract:
A novel semiconductor device where multilevel data can be written and read. The semiconductor device includes first to fifth transistors, a capacitor, a bit line, and a power supply line. Write operation is performed in such a manner that first data is supplied to a gate of the fifth transistor through the first transistor; the first transistor is turned off; second data is supplied to a second electrode of the capacitor through the second transistor to convert the first data into third data; and the second electrode of the capacitor are made electrically floating. The second electrode of the capacitor is initialized to GND through the third transistor. Read operation is performed by charging or discharging the bit line through the fourth transistor and the fifth transistor. The first to third transistors are preferably oxide semiconductor transistors.
Public/Granted literature
- US20150187775A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME Public/Granted day:2015-07-02
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