Invention Grant
US09349467B2 Read threshold estimation in analog memory cells using simultaneous multi-voltage sense
有权
使用同时多电压检测在模拟存储单元中读取阈值估计
- Patent Title: Read threshold estimation in analog memory cells using simultaneous multi-voltage sense
- Patent Title (中): 使用同时多电压检测在模拟存储单元中读取阈值估计
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Application No.: US14341991Application Date: 2014-07-28
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Publication No.: US09349467B2Publication Date: 2016-05-24
- Inventor: Barak Baum , Eyal Gurgi
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C11/56 ; G11C16/34 ; G11C29/02 ; G11C7/06

Abstract:
A method includes dividing a group of analog memory cells into multiple subsets. The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results. An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds.
Public/Granted literature
- US20140355341A1 READ THRESHOLD ESTIMATION IN ANALOG MEMORY CELLS USING SIMULTANEOUS MULTI-VOLTAGE SENSE Public/Granted day:2014-12-04
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