发明授权
- 专利标题: Method for manufacturing nitride semiconductor layer
- 专利标题(中): 氮化物半导体层的制造方法
-
申请号: US13604183申请日: 2012-09-05
-
公开(公告)号: US09349590B2公开(公告)日: 2016-05-24
- 发明人: Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
- 申请人: Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P
- 优先权: JP2012-052343 20120308
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L33/00 ; H01L33/12
摘要:
According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.
公开/授权文献
- US20130237036A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 公开/授权日:2013-09-12