Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14802643Application Date: 2015-07-17
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Publication No.: US09349651B2Publication Date: 2016-05-24
- Inventor: Jong-Su Kim , Hee-Young Go , Sang-Jin Kim , Yong-Kug Bae , Il-Young Yoon
- Applicant: Jong-Su Kim , Hee-Young Go , Sang-Jin Kim , Yong-Kug Bae , Il-Young Yoon
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0091051 20140718
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/82 ; H01L29/66 ; H01L21/66 ; H01L23/544 ; H01L21/762
Abstract:
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate including a circuit region and a scribe lane region, an active fin protruding from the substrate in the circuit region, a first gate structure extending over the active fin in the circuit region, and a second gate structure formed in the scribe lane region.
Public/Granted literature
- US20160020149A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-01-21
Information query
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