Invention Grant
US09349656B2 Method of forming a complementary metal-oxide-semiconductor (CMOS) device
有权
形成互补金属氧化物半导体（CMOS）器件的方法
- Patent Title: Method of forming a complementary metal-oxide-semiconductor (CMOS) device
- Patent Title (中): 形成互补金属氧化物半导体（CMOS）器件的方法
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Application No.: US14496225Application Date: 2014-09-25
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Publication No.: US09349656B2Publication Date: 2016-05-24
- Inventor: Bin Yang , Xia Li , Jun Yuan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Xiaotun Qiu
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L27/12 ; H01L21/84 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/165 ; H01L29/10 ; H01L29/47 ; H01L21/28
Abstract:
A complementary metal-oxide-semiconductor (CMOS) device and methods of formation thereof are disclosed. In a particular example, a method of forming a CMOS device includes forming a first layer on an extension layer of a wafer, forming a first gate on a portion of the first layer, and forming an expansion region proximate to the extension layer. The method also includes removing a portion of the first gate to create a cavity and removing a portion of the first layer to extend the cavity to the extension layer.
Public/Granted literature
- US20150050785A1 METHOD OF FORMING A COMPLEMENTARY METAL-OXIDESEMICONDUCTOR (CMOS) DEVICE Public/Granted day:2015-02-19
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