发明授权
- 专利标题： Semiconductor devices including conductive features with capping layers and methods of forming the same
- 专利标题（中）： 包括具有封盖层的导电特征的半导体器件及其形成方法
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申请号： US13452446申请日： 2012-04-20
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公开(公告)号： US09349689B2公开(公告)日： 2016-05-24
- 发明人: Hui-Chun Yang , Mei-Ling Chen , Keng-Chu Lin , Joung-Wei Liou
- 申请人： Hui-Chun Yang , Mei-Ling Chen , Keng-Chu Lin , Joung-Wei Liou
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L23/532 ; H01L21/285 ; H01L21/768
摘要：
Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.
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