Invention Grant
- Patent Title: Semiconductor structure and a fabricating method thereof
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14488295Application Date: 2014-09-17
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Publication No.: US09349815B2Publication Date: 2016-05-24
- Inventor: Kuan-Yi Tseng , Tzu-Ping Chen , Chun-Lung Chang , Chih-Haw Lee , Wei-Shiang Huang , Chien-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/423 ; H01L29/78 ; H01L29/66
Abstract:
A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.
Public/Granted literature
- US20160079380A1 SEMICONDUCTOR STRUCTURE AND A FABRICATING METHOD THEREOF Public/Granted day:2016-03-17
Information query
IPC分类:
