公开(公告)号：US20160079380A1

公开(公告)日：2016-03-17

申请号：US14488295

申请日：2014-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Yi Tseng ,  Tzu-Ping Chen ,  Chun-Lung Chang ,  Chih-Haw Lee ,  Wei-Shiang Huang ,  Chien-Hung Chen

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42368 ,  H01L21/28035 ,  H01L21/28158 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7833

Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.

Abstract translation: 提供了栅极结构。 栅极结构包括衬底，设置在衬底上的栅极和设置在衬底和栅极之间的栅极电介质层，其中栅极电介质层为杠铃形状。 杠铃具有连接到两个凸起端的薄中心。 凸出部分的一部分延伸到栅极和衬底中。

公开(公告)号：US09349815B2

公开(公告)日：2016-05-24

申请号：US14488295

申请日：2014-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Yi Tseng ,  Tzu-Ping Chen ,  Chun-Lung Chang ,  Chih-Haw Lee ,  Wei-Shiang Huang ,  Chien-Hung Chen

IPC: H01L21/336 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/42368 ,  H01L21/28035 ,  H01L21/28158 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7833

Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.

Abstract translation: 提供了栅极结构。 栅极结构包括衬底，设置在衬底上的栅极和设置在衬底和栅极之间的栅极电介质层，其中栅极电介质层为杠铃形状。 杠铃具有连接到两个凸起端的薄中心。 凸出部分的一部分延伸到栅极和衬底中。